Numerical simulation of an optoelectronic thyristor in the regime of incomplete turn-off
نویسندگان
چکیده
Direct two-dimensional simulations are used to analyse the possibility of controlling the carrier concentration in the gated base of a GaAs optoelectronic thyristor, which operates in the regime of incomplete turn-o . Modelling results indicate that the number of carriers, light intensity, current distribution, and the position of the light-emitting region the gated base of the thyristor can e ectively be changed using gate currents, insu cient to turn the device completely o . The utilization of incomplete turn-o principle can be used for light-intensity modulation and switching purposes.
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